The new 530 GB eUFS 3.1 stores 8K videos and large-size image files
without buffering
Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first – gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones. Delivering three times the write speed of the previous 512 GB eUFS 3.0 mobile memory, Samsung’s new eUFS 3.1 breaks the 1GB / s performance threshold in smartphone storage.
“With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “The new eUFS 3.1 reiter our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.”
At a sequential write speed of over 1, (MB / s, Samsung) (GB eUFS 3.1 boasts more than twice the speed of a SATA-based PC) (MB / s) and over ten times the speed of a UHS-I microSD card (125 MB / s). This means consumers can enjoy the speed of an ultra-slim notebook when storing massive files like 8K videos or several hundred large-size photos in their smartphones, without any buffering. Transferring contents from an old phone to a new device will also require considerably less time. Phones with the new eUFS 3.1 will only take about 1.5 minutes to move GB of data whereas UFS 3.0-based phones require more than four minutes.
In terms of random performance, the 512 GB eUFS 3.1 processes up to 70 percent faster than the widely used UFS 3.0 version, offering , input / output operations per second (IOPS) for reads and , IOPS for writes.
Along with the 512 GB option, Samsung will also have (GB and) GB capacities available for flagship smartphones.
Samsung began volume production of fifth-generation V-NAND at its new Xi’an, China, line (X2) this month to fully accommodate storage demand throughout the flagship and high-end smartphone market. The company soon plans to shift V-NAND volume production at its Pyeongtaek line (P1) in Korea from fifth-generation to sixth-generation V-NAND to better address the growing demand.
Samsung Embedded Storage Memory Lineup
7, IOPS |
7, IOPS |
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